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SO-DIMM DDR3 Memory

Deliver stable memory technology with Advantech! We offer industrial grade SO-DDR3 1866/1600/1333 memory with 30μ" gold plating connector (204 pin) featuring increased power efficiency and bandwidth. With rigorous reliability, vibration tests and -40 ~ 85℃ (-40 ~ 185℉) wide operating temp. range, our certified SODIMM DDR3 is suitable for enterprise, embedded, and ultra thin mobile devices like micro-servers, and notebook applications.

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24 total products

Part Number Description Memory
    Capacity Chip Manufacturer Feature Manufacturer Operating Temperature
Part Number Description Memory
    Capacity Chip Manufacturer Feature Manufacturer Operating Temperature
96SD3-2G1600NN-AP 2G SO-DDR3-1600 204Pin 256MX8 1.5V Unbuffered Hynix Chip 2 GB HYNIX Unbuffered Apacer 0 ~ 85°C (32 ~ 185°F)
96SD3-4G1066E-AP 4G SO-DDR3-1066 204Pin 256MX8 1.5V ECC Hynix Chip 4 GB HYNIX ECC Apacer 0 ~ 95°C (32 ~ 203°F)
96SD3-4G1600NN-AP 4G SO-DDR3-1600 204Pin 256MX8 1.5V Unbuffered Hynix Chip 4 GB HYNIX Unbuffered Apacer 0 ~ 85°C (32 ~ 185°F)
96SD3-8G1600NN-AP 8G SO-DDR3-1600 204Pin 512MX8 1.5V Unbuffered Micron Chip 8 GB HYNIX Unbuffered Apacer 0 ~ 85°C (32 ~ 185°F)
AQD-SD31GN13-SX Advantech 1G SO-DDR3-1333 204Pin 128MX8 1.5V Unbuffered Samsung Chip 1 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD31GN16-HC Advantech 1G SO-DDR3-1600 204Pin 128MX16 1.5V Unbuffered Hynix Chip 1 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L1GN16-SC Advantech 1GB DDR3 1600 204Pin 128Mb x 16 Unffered SODIMM 1.35V 1 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L2GN16-HQ Advantech 2G SO-DDR3-1600 204Pin 256MX8 1.35V Unbuffered Hynix Chip 2 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L2GN16-SQ1 Advantech 2G SO-DDR3-1600 204Pin 256MX8 1.35V Unbuffered Samsung Chip 2 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L4GE16-MG Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Micron Chip 4 GB MICRON ECC Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L4GE16-SG Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip 4 GB SAMSUNG ECC Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L4GN16-HG Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Hynix Chip 4 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L4GN16-MG Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Micron Chip 4 GB MICRON Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L4GN16-MGI Advantech 4G Anti-sulfur and Wide Temp SO-DDR3-1600 204Pin 512X8 1.35V Micron Chip 4 GB MICRON Unbuffered Advantech -40 ~ 85°C (-40 ~ 185°F)
AQD-SD3L4GN16-SG1 Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L4GN16-SQ Advantech 4G SO-DDR3-1600 204Pin 256X8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L4GN18-MG Advantech 4G SO-DDR3-1866 204Pin 512X8 1.35V Unbuffered Micron Chip 4 GB MICRON Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L8GE16-MG Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Micron Chip 8 GB MICRON ECC Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L8GE16-SG Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip 8 GB SAMSUNG ECC Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L8GN16-HG Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Hynix Chip 8 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L8GN16-MG Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Micron Chip 8 GB MICRON Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L8GN16-MGI Advantech 8G Anti-sulfur and Wide Temp SO-DDR3-1600 204Pin 512X8 1.35V Micron Chip 8 GB MICRON Unbuffered Advantech -40 ~ 85°C (-40 ~ 185°F)
AQD-SD3L8GN16-SG1 Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip 8 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-SD3L8GN18-MG Advantech 8G SO-DDR3-1866 204Pin 512X8 1.35V Unbuffered Micron Chip 8 GB MICRON Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)

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