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DDR3 Memory

Deliver stable memory technology with Advantech! We offers DDR3 1866/1600/1333 memory with 30μ" gold plating connector (240 pin) featuring 1.35v/1.5v low operating voltage and better bandwidth. With rigorous reliability, vibration tests, and 0 ~ 95℃ (32 ~ 203℉) wide operating temperature range, our certified DIMM is suitable for edge computing, enterprise, embedded, automotive, data centers, and networking applications.

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21 total products

Part Number Description Memory
    Capacity Chip Manufacturer Feature Manufacturer Operating Temperature
Part Number Description Memory
    Capacity Chip Manufacturer Feature Manufacturer Operating Temperature
96D3-4G1600NN-APL 4G DDR3-1600 240Pin 256MX8 1.5V VLP Unbuffered Hynix Chip 4 GB HYNIX Unbuffered Apacer 0 ~ 95°C (32 ~ 203°F)
96D3-8G1600E-APL 8G DDR3-1600 240Pin 512MX8 1.5V VLP ECC Micron Chip 8 GB MICRON Unbuffered Apacer 0 ~ 95°C (32 ~ 203°F)
96D3-8G1600NN-APL 8G DDR3-1600 240Pin 512MX8 1.5V VLP Unbuffered Micron Chip 8 GB MICRON Unbuffered Apacer 0 ~ 95°C (32 ~ 203°F)
AQD-D31GN16-HC Advantech 1G DDR3-1600 240Pin 128MX16 1.5V Unbuffered Hynix Chip 1 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D38GRV16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.5V VLP Registered Samsung Chip 8 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L2GE16-SQ Advantech 2G DDR3-1600 240Pin 256MX8 1.35V ECC Samsung Chip 2 GB SAMSUNG ECC Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L2GN16-HQ Advantech 2G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Hynix Chip 2 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L2GN16-SQ1 Advantech 2G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Samsung Chip 2 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GE16-SG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip 4 GB SAMSUNG ECC Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GN16-HG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Hynix Chip 4 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GN16-MG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Micron Chip 4 GB MICRON Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GN16-SG1 Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GN16-SQ Advantech 4G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GN18-MG Advantech 4G DDR3-1866 240Pin 512X8 1.35V Unbuffered Micron Chip 4 GB MICRON Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L4GR16-SG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V ECC and Registered Samsung Chip 4 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GE16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip 8 GB SAMSUNG ECC Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GN16-HG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Hynix Chip 8 GB HYNIX Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GN16-MG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Micron Chip 8 GB MICRON Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GN16-SG1 Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip 8 GB SAMSUNG Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GN18-MG Advantech 8G DDR3-1866 240Pin 512X8 1.35V Unbuffered Micron Chip 8 GB MICRON Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F)
AQD-D3L8GR16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Registered Samsung Chip 8 GB SAMSUNG Registered Advantech 0 ~ 85°C (32 ~ 185°F)

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